7N70G-TQ2-R datasheet(3/8 Pages) UTC

3 / 8 page

7N70

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-103. H



ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

Gate-Source Voltage

VGSS

±30

Continuous Drain Current

TC = 25°C

7.0

TC = 100°C

4.7

Drain Current Pulsed (Note 2)

IDM

Avalanche Energy, Single Pulsed (Note 3)

EAS

530

Avalanche Energy, Repetitive, Limited by TJMAX

EAR

14.2

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation (TC = 25°C)

TO-220F/TO-220F1

TO-220F3

TO-220/TO-262

TO-263

142

TO-220F2

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ

3. L=19.5mH, IAS=7.0A, VDD=50V, RG=0 Ω, Starting TJ=25°C

4. ISD ≤ 7.0A, di/dt ≤100A/μs, VDD ≤ BVDSS, Starting TJ=25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

TO-220F/TO-220F1

TO-220F3

θJC

2.6

°C/W

TO-220/TO-262

TO-263

0.88

°C/W

TO-220F2

2.5

°C/W

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