3N65

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-590.F



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

3.0

A

Continuous Drain Current

3.0

A

Pulsed Drain Current (Note 2)

12

A

Avalanche Energy

Single Pulsed (Note 3)

200

mJ

Repetitive (Note 2)

7.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

75

W

TO-220F/TO-220F1

34

TO-251/TO-252/TO-251S

TO-251S2/TO-251S4

50

TO-126

17

DFN-8(5×6)

25

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1

62.5

°C/W

TO-251/TO-252/TO-251S

TO-251S2/TO-251S4

110

TO-126

132

DFN-8(5×6)

75 (Note)

Junction to Case

TO-220

1.67

°C/W

TO-220F/TO-220F1

3.68

TO-251/TO-252/TO-251S

TO-251S2/TO-251S4

2.5

TO-126

7.36

DFN-8(5×6)

5 (Note)

Note: The data tested by surface mounted on a 1 inch