1N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-052.N

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

1.2

A

Continuous Drain Current

1.2

A

Pulsed Drain Current (Note 2)

4.8

A

Avalanche Energy

Single Pulsed (Note 3)

50

mJ

Repetitive (Note 2)

4.0

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

SOT-223

8

W

TO-251/TO-252

TO-252D/TO-251S

TO-251S2/ TO-251S4

28

TO-220

40

TO-220F

21

TO-220F2

23

1

TO-126

12.5

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-223

150

°С/W

TO-251/TO-252

TO-252D/TO-251S

TO-251S2/ TO-251S4

110

TO-220/TO-220F

62.5

TO-220F2

62.5

TO-92

140

TO-126

132

Junction to Case

SOT-223

14

°С/W

TO-251/TO-252

TO-252D/TO-251S

TO-251S2/ TO-251S4

4.53

TO-220

3.13

TO-220F

5.95

TO-220F2

5.43

TO-92

80

TO-126

10