1N70

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-171.E

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

700

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

1.2

A

Continuous Drain Current

1.2

A

Pulsed Drain Current (Note 2)

4.8

A

Avalanche Energy (Note 2)

Single Pulsed

50

mJ

Repetitive

4.0

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

Power Dissipation

TO-251/TO-251L

TO-252

28

W

TO-92

1.6

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-251/TO-251L

TO-252

110

°C/W

TO-92

140

°C/W

Junction to Case

TO-251/TO-251L

TO-252

4.53

°C/W

TO-92

79

°C/W