70N06L-TQ2-R datasheet(3/9 Pages) UTC

3 / 9 page

70N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R502-089.D



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current

TC = 25°C

TC = 100°C

Drain Current Pulsed (Note 2)

IDM

280

Avalanche Energy

Single Pulsed (Note 3)

EAS

600

Repetitive (Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

V/ns

Power Dissipation

TO-220/TO-262/TO-263

104

TO-220F

TO-220F2

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repeativity rating: pulse width limited by junction temperature

3. L=0.24mH, IAS=70A, VDD=25V, RG=20Ω, Starting TJ=25°C

4. ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

°C/W

Junction to Case

TO-220/TO-262

TO-263

θJC

1.2

°C/W

TO-220F

3.47

°C/W

TO-220F2

3.28

°C/W

70N06L-TQ2-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

70N06L-TQ2-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7 8 9

bảng dữ liệu tải về

Link URL