UT2352G-AE3-R datasheet(2/5 Pages) UTC

2 / 5 page

UT2352

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-157.E



ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±25

Continuous Drain Current

-1.3

Pulsed Drain Current

IDM

-10

SOT-23

0.46

Power Dissipation (Note 3)

DFN-8(3×3)

2.4

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL RESISTANCES CHARACTERISTICS

PARAMETER

SYMBOL

RATING

UNIT

SOT-23

250

°C/W

Junction-to-Ambient (Note 3)

DFN-8(3×3)

θJA

°C/W

SOT-23

°C/W

Junction-to-Case

DFN-8(3×3)

θJC

°C/W



ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250uA

-30

Drain-Source Leakage Current

IDSS

VDS=-24V, VGS=0V

-1

Gate-Source Leakage Current

IGSS

VGS=±25V, VDS=0V

±100

Breakdown Voltage Temperature

Coefficient

∆BVDSS/∆TJ Reference to 25℃, ID=-250uA

-17

mV/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250uA

-0.8

-2.0

-2.5

VGS=-10V, ID=-1.3A

150

180

mΩ

Drain-Source On-State Resistance

(Note 2)

RDS(ON)

VGS=-4.5V, ID=-1.1A

250

300

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

150

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=-15V, f=1MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

1.4

1.9

Gate-Source Charge

QGS

0.5

Gate-Drain Charge

QGD

VDS=-10V, VGS=-4.5V,

ID=-0.9A

0.5

Turn-ON Delay Time (Note 2)

tD(ON)

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall Time

VDD=-10V, VGS=-10V, ID=-1A,

RG=6Ω

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward

Voltage(Note2)

VSD

VGS=0V, IS=-0.42 A

-0.8

-1.2

Maximum Continuous Drain Source Diode

Forward Current

-0.42

Reverse Recovery Time

tRR

Reverse Recovery Charge

QRR

IF = -3.9 A, dIF/dt = 100 A/μs

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on 0.001 in

2 pad of 2oz. copper; 270℃/W when mounted on min.

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