UTD351G-AE3-R datasheet(2/5 Pages) UTC

2 / 5 page

UTD351

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-154.C



ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 3)

1.4

Pulsed Drain Current

IDM

Power Dissipation

0.5

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient (Note 3)

θJA

250

°C/W

Junction-to-Case

θJC

°C/W



ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250 µA

Drain-Source Leakage Current

IDSS

VDS =24 V, VGS =0 V

µA

Gate-Source Leakage Current

IGSS

VGS = ±20V, VDS = 0 V

±100

Breakdown Voltage Temperature

Coefficient

∆BVDSS/∆TJ ID=250μA, Referenced to 25°C

mV/℃

ON CHARACTERISTICS (Note2)

Gate-Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

0.8

2.1

Static Drain–Source On–Resistance

RDS(ON)

VGS =10 V, ID =1.4 A

160

mΩ

VGS =4.5 V, ID =1.2 A

120

250

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS =15 V, VGS =0V, f=1.0MHz

145

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS (Note2)

Turn-ON Delay Time

tD(ON)

VDD =15V, ID=1A, VGS =10V,

RGEN =6 Ω

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

Total Gate Charge

VDS =15 V,VGS =4.5 V,ID =1.4 A

1.3

1.8

Gate-Source Charge

QGS

0.5

Gate-Drain Charge

QGD

0.5

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source

Diode Forward Current

0.42

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 0.42 A (Note 2)

0.8

1.2

Reverse Recovery Time

tRR

IF = 1.4 A, dIF/dt = 100 A/μs

Reverse Recovery Charge

QRR

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on 1 in

2 copper pad of FR4 board; 250℃/W when mounted on min.

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