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UT5504G-TN3-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

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Giải thích chi tiết về linh kiện  P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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UT5504G-TN3-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

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UT5504
Power MOSFET
UNISONICTECHNOLOGIESCO.,Ltd
3 of 5
www.unisonic.com.tw
QW-R502-417.E
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TC=25°C
ID
-8
A
TC=70°C
-6
Pulsed Drain Current
IDM
-32
A
Power Dissipation
TO-251/TO-252
PD
41
W
SOP-8
5
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-251/TO-252
θJA
75
°C/W
SOP-8
50
Junction to Case
TO-251/TO-252
θJC
3
°C/W
SOP-8
25
Notes: 1. Pulse width limited by maximum junction temperature.
2. Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-40
V
Drain-Source Leakage Current
IDSS
VDS=-32V, VGS=0V
1
µA
VDS=-30V, VGS=0V, TJ=125°C
10
Gate- Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±250 nA
On-State Drain Current (Note 1)
ID(ON)
VDS=-5V, VGS=-10V
-32
A
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
-1.5 -2.5
V
Static Drain-Source On-State
Resistance (Note 1)
RDS(ON)
VGS=-4.5V, ID=-6A
65
94
mΩ
VGS=-10V, ID=-8A
45
55
Forward Transconductance (Note 1)
gFS
VDS=-10V, ID=-8A
11
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=10V, f=1MHz
1078
pF
Output Capacitance
COSS
131
pF
Reverse Transfer Capacitance
CRSS
100
pF
SWITCHING PARAMETERS
(Note 2)
Total Gate Charge
QG
VGS=-10V, VDS=0.5BVDSS,
ID=-8A
91
120
nC
Gate to Source Charge
QGS
9.6
nC
Gate to Drain Charge
QGD
4.7
nC
Turn-ON Delay Time
tD(ON)
VGS=-10V, VDS=-20V,
ID ≒ -1A, RGS=6Ω
28
35
ns
Rise Time
tR
40
50
ns
Turn-OFF Delay Time
tD(OFF)
198 250
ns
Fall-Time
tF
78
120
ns



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