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UT4800G-S08-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

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Giải thích chi tiết về linh kiện  N-CHANNEL POWER MOSFET
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UT4800G-S08-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

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UT4800
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 7
www.unisonic.com.tw
QW-R105-001.C
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (Note 1)
ID
6.5
A
Pulsed Drain Current (Note 1)
IDM
40
A
Power Dissipation
PD
1.3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
70
95
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24 V, VGS =0 V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
0.8
1.8
V
Static Drain-Source On-Resistance
RDS(ON)
VGS =10 V, ID =9A
15.5
18.5
mΩ
VGS =4.5 V, ID =7A
23
30
mΩ
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=10V,VDS=15V, RL=15Ω,
RGEN=6Ω
7
15
ns
Turn-ON Rise Time
tR
12
20
ns
Turn-OFF Delay Time
tD(OFF)
32
50
ns
Turn-OFF Fall-Time
tF
14
25
ns
Total Gate Charge
QG
VDS =15V, VGS =5.0V,
ID =9A
8.7
13
nC
Gate-Source Charge
QGS
1.5
nC
Gate-Drain Charge
QGD
3.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V, IS=2.3A
0.75
1.2
V
Maximum Body-Diode Continuous Current
IS
2.3
A
Body Diode Reverse Recovery Time
tRR
IF=2.3A, dI/dt=100A/μs
30
60
ns
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. Pulse Test: Pulse width ≤ 300μs, Duty cycle 2% max.



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