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UT3418G-AE3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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UT3418G-AE3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UT3418
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-226.E
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current
ID
3.8
A
Pulsed Drain Current (Note 2)
IDM
15
A
Power Dissipation
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
100
125
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250μA, VGS=0V
30
V
Drain-Source Leakage Current
IDSS
VDS=24V, VGS=0V
0.001
1
µA
Gate-Source Leakage Current
IGSS
VGS=±12V, VDS=0V
100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
1.4
1.8
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3.8A
43
60
mΩ
VGS=4.5V, ID=3.5A
52
70
mΩ
VGS=2.5V, ID=1A
101
155
mΩ
On-State Drain Current
ID(ON)
VDS=5V, VGS=4.5V
15
A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=15V, VGS=0V, f=1.0MHz
226
270
pF
Output Capacitance
COSS
39
pF
Reverse Transfer Capacitance
CRSS
29
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDS=15V,RL =3.9Ω,
VGS =10V, RG=6Ω
2.6
4
ns
Turn-ON Rise Time
tR
3.2
5
ns
Turn-OFF Delay Time
tD(OFF)
14.5
22
ns
Turn-OFF Fall-Time
tF
2.1
3
ns
Total Gate Charge
QG
VDS=15V, VGS=4.5V,
ID=3.8A
3
3.6
nC
Gate Source Charge
QGS
1.4
nC
Gate Drain Charge
QGD
0.55
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A, VGS=0V
0.81
1
V
Maximum Body-Diode Continuous Current
IS
2.5
A
Body Diode Reverse Recovery Time
tRR
IF=3.8A, dI/dt=100A/μs
10.2
13
ns
Body Diode Reverse Recovery Charge
QRR
3.8
5
nC



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