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UT30P03G-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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UT30P03G-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UT30P03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-335.C ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -30 A Power Dissipation PD 50 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 50 °C/W Junction to Case θJC 3 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID =-250 μA -30 V Drain-Source Leakage Current IDSS VDS=-30V, VGS=0V -1 μA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250 μA -1 -3 V Static Drain-Source On-State Resistance (Note) RDS(ON) VGS=-10V, ID =-10A 30 40 mΩ VGS=-4.5V, ID =-10A 40 60 mΩ DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =-25V, VGS=0V, f=1.0MHz 700 pF Output Capacitance COSS 130 pF Reverse Transfer Capacitance CRSS 120 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDS =-15V, ID=-1A, RL = 15Ω, VGS=-10V, RG=3.3Ω 25 ns Turn-On Rise Time tR 50 ns Turn-Off Delay Time tD(OFF) 380 ns Turn-Off Fall Time tF 180 ns Total Gate Charge QG VDS= -24V, ID= -30A, VGS= -4.5V 100 nC Gate-Source Charge QGS 15 nC Gate-Drain Charge QGD 10 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS =-10A -1.2 V Maximum Continuous Drain-Source Diode Forward Current IS -30 A Note: Pulse Test: Pulse width≤300μs, Duty cycle≤2% |
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