UT30P04L-TN3-R datasheet(3/4 Pages) UTC

3 / 4 page

UT30P04

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-465.C



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-40

VDS=-32V, VGS=0V

Drain-Source Leakage Current

IDSS

VDS=-30V, VGS=0V, TJ=125°C

µA

Gate- Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±250 nA

On-State Drain Current (Note 1)

ID(ON)

VDS=-5V, VGS=-10V

-70

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1

-2.5

-3

VGS=-5V, ID=-8A

VGS=-7V, ID=-8A

Static Drain-Source On-State

Resistance (Note 1)

RDS(ON)

VGS=-10V, ID=-10A

mΩ

Forward Transconductance (Note 1)

gFS

VDS=-10V, ID=-10A

Gate Resistance

VGS=0V, VDS=0V, f=1.0MHz

4.95

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

1090

Output Capacitance

COSS

175

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=-20V, f=1.0MHz

GATE CHARGE

(Note 2)

QG (VGS=-10V)

Total Gate Charge

QG (VGS=-4.5V)

8.5

Gate to Source Charge

QGS

5.5

Gate to Drain Charge

QGD

VDS=0.5V(BR)DSS, ID=-18A

SWITCHING PARAMETERS

(Note 2)

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

VGS=-10V, VDS=-20V, ID≈-10A,

RGS=6Ω, RL=2Ω

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Continuous Current

-21

Drain-Source Diode Forward Voltage

VSD

IF=-10A, VGS=0V

-1.2

Reverse Recovery Time

tRR

15.5

Reverse Recovery Charge

QRR

IF=-10A, dIF/dt=100A/µs

7.9

Notes: 1. Pulsde test: Pulse width ≤ 300µsec, duty cycle ≤ 2%.

2. Independent of operating temperature.

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