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UMY1NG-AL5-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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UMY1NG-AL5-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UMY1N Preliminary DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R222-006.a ABSOLUTE MAXIMUM RATINGS (T A=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT TR1 TR2 Collector-Base Voltage VCBO -60 60 V Collector-Emitter Voltage VCEO -50 50 V Emitter-Base Voltage VEBO -6 7 V Continuous Collector Current IC -150 150 mA Collector Power Dissipation Pc 150 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT TR1 Collector-Base Breakdown Voltage BVCBO IC=-50µA, IE=0 -60 V Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0 -50 V Emitter-Base Breakdown Voltage BVEBO IE=-50µA, IC=0 -6 V Collector Cut-Off Current ICBO VCB=-60V, IE=0 -0.1 µA Emitter Cut-Off Current IEBO VEB=-6V, IC=0 -0.1 µA Collector-Emitter Saturation Voltage VCE(SAT) IC=-50mA, IB=-5mA -0.5 V DC Current Gain hFE VCE=-6V, IC=-1mA 120 560 Transition Frequency fT VCE=-12V, IE=-2mA, f=100MHz 140 MHz Output Capacitance Cob VCB=-12V, IE=0, f=1MHz 5 pF TR2 Collector-Base Breakdown Voltage BVCBO IC=50µA, IE=0 60 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 50 V Emitter-Base Breakdown Voltage BVEBO IE=50µA, IC=0 7 V Collector Cut-Off Current ICBO VCB=60V, IE=0 0.1 µA Emitter Cut-Off Current IEBO VEB=7V, IC=0 0.1 µA Collector-Emitter Saturation Voltage VCE(SAT) IC=50mA, IB=5mA 0.4 V DC Current Transfer Ratio hFE VCE=6V, IC=1mA 120 560 Transition Frequency fT VCE=12V, IE=2mA, f=100MHz 180 MHz Output Capacitance Cob VCB=12V, IE=0, f=1MHz 3.5 pF |
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