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UT3443G-AG6-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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UT3443G-AG6-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UT3443 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-557.B ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Drain Current Continuous TJ =150°C (Note 2) TA=25°C ID -4.5 A TA=70°C -3.6 A Pulsed IDM -20 A Power Dissipation (Note 2) TA=25°C PD 1.1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 110 °C/W Note: Surface Mounted on FR4 Board, t≤5 sec ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Leakage Current IDSS VDS=-20V, VGS=0V -1 µA VDS=-20V, VGS=0V, TC=70°C -5 Gate- Source Leakage Current Forward IGSS VGS=+12V, VDS=0V +100 nA Reverse VGS=-12V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -0.6 -1.4 V Static Drain-Source On-State Resistance (Note 1) RDS(ON) VGS=-4.5V, ID=-4.5A 0.050 0.065 Ω VGS=-2.7V, ID=-3.8A 0.070 0.090 Ω VGS=-2.5V, ID=-3.7A 0.080 0.100 Ω SWITCHING PARAMETERS (Note 2) Total Gate Charge QG VGS=-4.5V, VDS=-10V, ID=-4.5A 7.3 15 nC Gate to Source Charge QGS 2.0 nC Gate to Drain Charge QGD 1.9 nC Gate Resistance Rg 3 15 Ω Turn-ON Delay Time tD(ON) VDD=-10V, ID≈-1.0A, VGEN=-4.5V, RL=10Ω, RG=6Ω 15 50 ns Rise Time tR 32 60 ns Turn-OFF Delay Time tD(OFF) 50 100 ns Fall-Time tF 45 80 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 1) VSD IS=-1.7A, VGS=0V -0.8 -1.2 V Body Diode Reverse Recovery Time tRR IF=-1.7A, di/dt=100A/µs 35 80 ns Notes: 1. Pulse test; pulse width ≤300μs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production testing. |
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