UG4JG-AL5-R datasheet(2/3 Pages) UTC

2 / 3 page

UG4J

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R222-001.B



ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

100

Total Power Dissipation

150(Note1)

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note

1. *120mW per element must not be exceeded.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=50μA

Collector-Emitter Breakdown Voltage

BVCEO

IC=1mA

Emitter-Base Breakdown Voltage

BVEBO

IE=1mA

Current Cutoff Current

ICBO

VCB=50V

0.5

µA

Emitter Cutoff Current

IEBO

VEB=4V

0.5

µA

Collector-Emitter Saturation Voltage

VCE(SAT) IC/IB=10mA/1mA

0.3

DC Current Transfer Ratio

hFE

VCE=5V, IC=1mA

100

250

600

Transition Frequency

VCE=10V, IE=-5mA, f=100MHz*

250

MHz

Input Resistance

KΩ

Note: * Transition frequency of the device.

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