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TIP41CG-X-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện TIP41CG-X-TN3-R
Giải thích chi tiết về linh kiện  NPN EXPITAXIAL PLANAR TRANSISTOR
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nhà sản xuất  UTC [Unisonic Technologies]
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TIP41CG-X-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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TIP41C
NPN PLANAR TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R203-008.I
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
DC
6
A
Collector Current
Pulse
IC
10
A
Base Current
IB
2
A
TO-220
65
TO-220F
22
TC=25C
TO-252
25
W
TO-220
2
TO-220F
0.7
Collector Dissipation
TA=25C
TO-252
PC
0.75
W
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-65 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Emitter Base Breakdown Voltage
BVEBO
IE=100μA, IC=0
5
V
Collector Base Breakdown Voltage
BVCBO
IE=100μA, IC=0
100
V
Collector Emitter Sustaining Voltage (Note)
VCEO
IC=30mA, IB=0
100
V
Collector Cutoff Current
ICEO
VCE=60V, IB=0
0.7
mA
Collector Cutoff Current
ICES
VCE=100V, VEB=0
400
μA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0
1
mA
Collector-Emitter Saturation Voltage (Note)
VCE(SAT) IC=6A, IB=600mA
1.5
V
Base-Emitter On Voltage (Note)
VBE(ON)
IC=6A, VCE=4V
2.0
V
hFE1
IC=300mA, VCE=4V
30
DC Current Gain (Note)
hFE2
IC=3A, VCE=4V
15
75
Current Gain Bandwidth Product
fT
VCE=10V, IC=500mA, f=1MHz
3
MHz
Note: Pulse Test: PW≦300μs, Duty Cycle≦2%
CLASSIFICATION OF hFE2
RANK
A
B
C
RANGE
15~30
28~48
45~75



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