TF218G-X-AN3-R datasheet(2/4 Pages) UTC

2 / 4 page

TF218

JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-093.F



ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Gate to Drain Voltage

VGDO

-20

Gate Current

Drain Current

Power Dissipation

100

Junction Temperature

150

°С

Storage Temperature

TSTG

-55~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

G-D Breakdown Voltage

BVGDO

IG=-100uA

-20

Gate Off Voltage

VGS(OFF)

VDS=5.0V, ID=1uA

-0.2

-0.6

-1.0

Drain Current

IDSS

VDS=2.0V, VGS=0

100

350

μA

Forward Transfer Admittance

|YFS|

VDS=2.0V, VGS=0, f=1KHz

0.65

1.0

Input Capacitance

CISS

VDS=5.0V, VGS=0, f=1MHz

3.5

Reverse Transfer Capacitance

CRSS

VDS=5.0V, VGS=0, f=1MHz

0.65

Voltage Gain

VIN=10mV, f=1KHz

-3.0

Reduced Voltage Characteristic

△

GVV

VIN=10mV, f=1KHz VCC=4.51.5V

-1.2

-3.5

Frequency Characteristic

△

GVf

f=1KHz~110Hz

-1.0

Input Resistance

ZIN

f=1KHz

MΩ

Output Resistance

f=1KHz

1000

Ω

Total Harmonic Distortion

THD

VIN=30mV, f=1KHz

1.2

Output Noise Voltage

VNO

VIN=0, A Curve

-110



CLASSIFICATION OF IDSS

RANK

RANGE

100-170

140-240

210-350

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