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MMBZXAL bảng dữ liệu(PDF) 5 Page - NXP Semiconductors

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Giải thích chi tiết về linh kiện  Low capacitance unidirectional double ESD protection diodes
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MMBZXAL bảng dữ liệu(HTML) 5 Page - NXP Semiconductors

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MMBZXAL_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
5 of 17
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
[1]
In accordance with IEC 61643-321 (10/1000
μs current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and
standard footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 or 2 to pin 3.
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
Table 7.
ESD maximum ratings
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1][2] -30
kV
machine model
[2] -2
kV
Table 8.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 8 kV
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit



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