DTA124EG-AN3-R datasheet(3/4 Pages) UTC

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DTA124E

PNP EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

www.unisonic.com.tw

QW-R206-044.F



ABSOLUATE MAXIUM RATINGS (TA = 25°C, unless otherwise specified)

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VI(OFF)

VCC= -5V, IOUT= -100μA

-0.5

Input Voltage

VI(ON)

VOUT= -0.2V, IOUT= -5mA

-3

Output Voltage

VO(ON)

IOUT/IIN= -10mA / -0.5 mA

-0.1

-0.3

Input Current

VIN= -5V

-0.36

Output Current

IO(OFF)

VCC= -50V , VIN=0V

-0.5

μA

DC Current Gain

VOUT= -5V, IOUT= -5mA

Input Resistance

15.4

28.6

kΩ

Resistance Ratio

R2/R1

0.8

1.2

Transition Frequency

VCE= -10 V, IE = 5mA, f=100MHz (Note)

250

MHz

Note: Transition frequency of the device

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

Input Voltage

VIN

-40 ~ +10

-100

Output Current

-30

SOT-23/SOT-323

200

SOT-523

150

Power Dissipation

TO-92

625

Junction Temperature

150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

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