2SC3669L-X-TN3-R datasheet(2/4 Pages) UTC

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2SC3669

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R209-015.D



PIN ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

Base Current

Collector Power Dissipation

SOT-223/SOT-89

0.5

TO-251/TO-252

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range

and assured by design from –20°C~85°C.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector Emitter Breakdown Voltage

V(BR)CEO

IC= 10mA, IB= 0

Collector Cut-Off Current

ICBO

VCB=80V, IE= 0

1.0

μA

Emitter Cut-Off Current

IEBO

VEB= 5V, IC=0

1.0

μA

DC Current Gain

hFE1

VCE=2V, IC=0.5A

240

hFE2

VCE=2V, IC=1.5A

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=1A, IB=0.05A

0.15

0.5

Base- Emitter Saturation Voltage

VBE(SAT)

IC=1A, IB=0.05A

0.9

1.2

Transition Frequency

VCE=2V, IC=0.5A

100

MHz

Collector Output Capacitance

Cob

VCB= 10V, IE= 0, f=1MHz

Switching Time

Turn-on Time

tON

IB1= -IB2=0.05A

DUTY CYCLE ≤ 1%

0.2

μs

Storage Time

TSTG

1.0

μs

Fall Time

0.2

μs



CLASSIFICATION OF hFE1

RANK

RANGE

70~140

120~240

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