STD888G-TN3-R datasheet(2/3 Pages) UTC

2 / 3 page

STD888

Preliminary

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R209-028.a



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage (IE=0)

VCBO

-60

Collector-Emitter Voltage (IB=0)

VCEO

-30

Emitter-Base Voltage (IC=0)

VEBO

-6

Collector Current

-5

Collector Peak Current (tp<5ms)

ICM

-10

Total Dissipation at TC=25°C

Junction Temperature

150

°C

Storage Temperature

TSTG

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TCASE=25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IE=0, IC=-100µA

-60

Collector-Emitter Breakdown Voltage

BVCEO (Note 1) IB=0, IC=-10mA

-30

Emitter-Base Breakdown Voltage

BVEBO

IC=0, IE=-100µA

-6

Collector Cut-off Current

ICBO

VCB=-30V, IE=0

-10

Emitter Cut-off Current

IEBO

IC=0, VEB=-6V

-10

Collector-Emitter Saturation Voltage

VCE(sat)

(Note 1)

IC=-500mA, IB=-5mA

-0.15

IC=-2A, IB=-50mA

-0.25

IC=-5A, IB=-250mA

-0.70

IC=-6A, IB=-250mA

-0.70

IC=-8A, IB=-400mA

-1

IC=-10A, IB=-500mA

-1.5

Base-Emitter Saturation Voltage

VBE(sat)

(Note 1)

IC=-2A, IB=-50mA

-1.1

IC=-6A, IB=-250mA

-1.4

DC Current Gain

hFE

(Note 1)

IC=-10mA, VCE=-1V

150

200

IC=-500mA, VCE=-1V

150

200 300

IC=-5A, VCE=-1V

100

IC=-8A, VCE=-1V

IC=-10A, VCE=-1V

Delay Time

IC=-3A, IB1=-IB2=-60mA

VCC=-20V

180 220

Rise Time

160 210

Storage Time

250 300

Fall Time

100

Note: 1. Pulsed: Pulse duration=300µs, duty cycle≤1.5%

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