DTC115EG-AN3-R datasheet(2/4 Pages) UTC

2 / 4 page

DTC115E

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-055.D



ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

Input Voltage

VIN

-10 ~ +40

Output Current

IOUT

IOUT(MAX)

100

Power Dissipation

SOT-23/SOT-323

200

SOT-523

150

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Input Voltage

VI(OFF)

VCC=5V, IOUT=100μA

0.5

VI(ON)

VOUT=0.3V, IOUT=1mA

Output Voltage

VOUT(ON)

IOUT=5mA, IIN=0.25mA

0.1

0.3

Input Current

IIN

VIN= 5V

0.15

Output Current

IO(OFF)

VCC=50V, VIN=0V

0.5

μA

DC Current Gain

hFE

VOUT= 5V, IOUT= 5mA

Input Resistance

100

130

kΩ

Resistance Ratio

R2/R1

0.8

1.2

Transition Frequency

VCE=10V, IE=-5mA, f=100MHz (Note)

250

MHz

Note: Transition frequency of the device

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