DTA144TG-AL3-R datasheet(2/3 Pages) UTC

2 / 3 page

DTA144T

PNP SILICON TRANSISITOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-065.E



ABSOLUTE MAXIMUM RATINGS (TA =25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

Collector Current

-100

Collector Power Dissipation

200

Junction Temperature

150

°С

Storage Temperature

TSTG

-55~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA =25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-50μA

-50

Collector-Emitter Breakdown Voltage

BVCEO

IC=-1mA

-50

Emitter-Base Breakdown Voltage

BVEBO

IE=-50μA

-5

Collector Cutoff Current

ICBO

VCB=-50V

-0.5

μA

Emitter Cutoff Current

IEBO

VEB=-4V

-0.5

μA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC =-5mA, IB= -0.5mA

-0.3

DC Current Transfer Ratio

hFE

VCE =-5V, IC= -1mA

100

250

600

Transition Frequency (Note)

VCE=-10V, IE=5mA, f=100MHz

250

MHz

Input Resistance

32.9

61.1

kΩ

Note: Transition frequency of the device

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