DTA123YG-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

DTA123Y

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-070.C



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

Input Voltage

VIN

-12 ~ +10

IOUT

-100

Output Current

IC(MAX)

-100

Power Dissipation

200

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL SPECIFICATIONS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VIN(OFF)

VCC =-5V, IOUT =-100μA

-0.3

Input Voltage

VIN(ON)

VOUT =-0.3V, IOUT =-20mA

-3

Output Voltage

VOUT(ON)

IOUT/IIN =-10mA/-0.5mA

-0.3

Input Current

IIN

VIN=-5V

-3.8

Output Current

IOUT(OFF)

VCC =-50V, VIN =0V

-0.5

μA

DC Current Gain

GIN

VOUT =-5V, IOUT =-10mA

Input Resistance

1.54

2.2

2.86

KΩ

Resistance Ratio

R2/R1

3.6

4.5

5.5

Transition Frequency

VCE =-10V, IE =−5mA, f=100MHz (Note)

250

MHz

Note: Transition frequency of the device

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