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MPSA94L-AB3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện MPSA94L-AB3-R
Giải thích chi tiết về linh kiện  HIGH VOLTAGE TRANSISTOR
PDF  3 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
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MPSA94L-AB3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

  MPSA94L-AB3-R Datasheet HTML 1Page - Unisonic Technologies MPSA94L-AB3-R Datasheet HTML 2Page - Unisonic Technologies MPSA94L-AB3-R Datasheet HTML 3Page - Unisonic Technologies  
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MPSA94
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R201-021,D
ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-6
V
TO-92
625
mW
Collector Power Dissipation(Ta=25℃)
SOT-89
PD
500
mW
Collector Current
IC
-300
mA
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
J=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-100μA, IE=0
-400
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-1mA, IB=0
-400
V
Collector-Emitter Breakdown Voltage
BVCES
IC=-100μA, VBE=0
-400
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100μA, IC=0
-5
V
Collector Cut-off Current
ICBO
VCB=-300V, IE=0
-100
nA
Collector Cut-off Current
ICES
VCE =-400V, VBE=0
-1
μA
Emitter Cut-off Current
IEBO
VEB=-4V, IC=0
100
nA
DC Current Gain(note)
hFE
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
60
70
70
40
300
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.20
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=-10mA, IB=-1mA
-0.75
V
Output Capacitance
Cob
VCB=-20V, IE=0, f=1MHz
7
pF
Note: Pulse test: Pulse Width<300
μs, Duty Cycle<2%



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