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MPSA92G-AB3-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies |
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MPSA92G-AB3-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies |
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3 / 5 page ![]() MPSA92/93 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R201-019.F ABSOLUTE MAXIMUM RATING (TA=25°С unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT MPSA92 -300 V Collector-Base Voltage MPSA93 VCBO -200 V MPSA92 -300 V Collector-Emitter Voltage MPSA93 VCEO -200 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA SOT-89 0.5 W Collector Dissipation TO-92/TO-92NL PC 0.62 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOT-89 250 °C/W Junction to Ambient TO-92/TO-92NL θJA 200 °C/W SOT-89 43 °C/W Junction to Case TO-92/TO-92NL θJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS MPSA92 -300 V Collector-Base Breakdown Voltage MPSA93 BVCBO IC=-100µA, IE=0 -200 V MPSA92 -300 V Collector-Emitter Breakdown Voltage MPSA93 BVCEO IC=-1mA, IB=0 -200 V Emitter-Base Breakdown Voltage BVEBO IE=-100µA, IC=0 -5 V MPSA92 -0.25 µA Collector Cut-Off Current MPSA93 ICBO VCB=-200V, IE=0 -0.25 µA Emitter Cut-Off Current IEBO VEB=-3V, IC=0 -0.10 µA ON CHARACTERISTICS 60 80 DC Current Gain(note) hFE VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA 80 Collector-Emitter Saturation Voltage VCE(SAT) IC=-20mA, IB=-2mA -0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=-20mA, IB=-2mA -0.90 V SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product fT VCE=-20V, IC=-10mA, f=100MHz 50 MHz MPSA92 6 pF Output Capacitance MPSA93 Cob VCB=-20V, IE=0, f=1MHz 8 pF Note: Pulse test: PW<300µs, Duty Cycle<2%, VCE(SAT)<200mV |
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