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MPSA44L-AN3-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

tên linh kiện MPSA44L-AN3-R
Giải thích chi tiết về linh kiện  HIGH VOLTAGE TRANSISTOR
PDF  5 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
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MPSA44L-AN3-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

  MPSA44L-AN3-R Datasheet HTML 1Page - Unisonic Technologies MPSA44L-AN3-R Datasheet HTML 2Page - Unisonic Technologies MPSA44L-AN3-R Datasheet HTML 3Page - Unisonic Technologies MPSA44L-AN3-R Datasheet HTML 4Page - Unisonic Technologies MPSA44L-AN3-R Datasheet HTML 5Page - Unisonic Technologies  
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MPSA44/45
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R208-006.K
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
MPSA44
VCBO
500
V
MPSA45
400
Collector-Emitter Voltage
MPSA44
VCEO
400
V
MPSA45
350
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Collector Dissipation
SOT-89
PC
500
mW
TO-252
1400
TO-126
1200
TO-92
625
Junction Temperature
TJ
125
°C
Operating Temperature
TOPR
-20 ~ +85
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown
Voltage
MPSA44
BVCBO
IC=100μA, IE=0
500
V
MPSA45
400
Collector-Emitter Breakdown
Voltage
MPSA44
BVCEO
IC=1mA, IB=0
400
V
MPSA45
350
Emitter-Base Breakdown Voltage
BVEBO
IE=100μA, IC=0
6
V
Collector Cutoff Current
MPSA44
ICBO
VCB=400V, IE=0
0.1
μA
MPSA45
VCB=320V, IE=0
0.1
Collector Cutoff Current
MPSA44
ICEO
VCE=400V, IB=0
0.5
μA
MPSA45
VCE=320V, IB=0
0.5
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
0.1
μA
ON CHARACTERISTICS
DC Current Gain (Note)
hFE
VCE=10V, IC=1mA
40
240
VCE=10V, IC=10mA
82
240
VCE=10V, IC=50mA
45
240
VCE=10V, IC=100mA
40
240
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=1mA, IB=0.1mA
0.4
V
IC=10mA, IB=1mA
0.5
IC=50mA, IB=5mA
0.75
Base-Emitter Saturation Voltage
VBE(SAT)
IC=10mA, IB=1mA
0.75
V
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
fT
VCE=20V,IC=10mA,
f=100MHz
50
MHz
Output Capacitance
COB
VCB=20V, IE=0, f=1MHz
7
pF
Note: Pulse test: PW<300
s, Duty Cycle<2%



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