MJE13003DL-X-TN3-R datasheet(3/5 Pages) UTC

3 / 5 page

MJE13003D

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R204-025.I



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector- Emitter Voltage (VBE =0)

VCES

700

Collector-Emitter Voltage (IB =0)

VCEO

400

Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS)

VEBO

Collector Current

1.5

Collector Peak Current (tP<5ms)

ICM

Base Current

0.75

Base Peak Current (tP<5ms)

IBM

1.5

TO-126

1.4

TO-92

1.1

TO-220

TA=25°C

TO-251/TO-252

1.56

TO-126

TO-92

1.5

TO-220

Power Dissipation

TC=25°C

TO-251/TO-252

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Emitter-Base Breakdown Voltage

BVEBO

IE =10mA, IC=0

Collector-Emitter Sustaining Voltage (Note)

VCEO(SUS)

IC=10mA, IB=0

400

Collector Cut-Off Current

ICES

VCE =700V,VBE =0

IC=0.5 A, IB=0.1 A

0.5

IC=1 A, IB=0.25 A

Collector-Emitter Saturation Voltage (Note)

VCE(SAT)

IC=1.5 A, IB=0.5 A

IC=0.5 A, IB=0.1 A

Base-Emitter Saturation Voltage (Note)

VBE(SAT)

IC=1 A, IB=0.25 A

1.2

hFE1

IC=0.5A, VCE =5 V

DC Current Gain

hFE2

IC=1 A, VCE =5 V

Rise Time

μs

Storage Time

μs

Resistive Load

Fall Time

VCC=125 V, IC=1 A, IB1=0.2 A,

IB2=-0.2 A, tP=25μs

0.7

μs

Inductive Load Storage Time

IC=1 A, IB1=0.2 A,VBE =-5 V,

L=50mH, VCLAMP=300V

0.8

μs

Diode Forward Voltage

IF=0.5 A

1.5

Note: Pulse Test: Pulse duration ≤ 300μs, Duty cycle ≤ 2%.



CLASSIFICATION OF hFE1

RANK

RANGE

14 ~ 22

21 ~ 27

26 ~ 32

31 ~ 37

36 ~ 42

41 ~ 47

46 ~ 52

51 ~ 57

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