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BU941L-TQ2-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện BU941L-TQ2-R
Giải thích chi tiết về linh kiện  NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER
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nhà sản xuất  UTC [Unisonic Technologies]
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BU941L-TQ2-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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BU941
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R203-025.D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCES
500
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
15
A
Collector Peak Current
ICM
30
A
Base Current
IB
1
A
Base Peak Current
IBM
5
W
TO-3P
155
W
TO-220
150
W
Total Power Dissipation (Tc=25
C)
TO-263
PD
65
W
Junction Temperature
TJ
+175
C
Storage Temperature
TSTG
-65 ~ +175
C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Sustaining
Voltage
VCEO(SUS)*
IC=1mA, VCLAMP=400V, L=10mH
(see Fig. 1)
400
V
Collector Cut-Off Current
ICES
VCE=500V, VBE=0
VCE=500V, VBE=0, TJ=125C
100
0.5
μA
mA
Collector Cut-Off Current
ICEO
VCE=450V, IB=0
VCE=450V, IB=0, TJ=125C
100
0.5
μA
mA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
20
mA
Collector-Emitter Saturation
Voltage
VCE(SAT)*
IC=8A, IB=100mA
IC=10A, IB=250mA
IC=12A, IB=300mA
1.6
1.8
2
V
Base-Emitter Saturation Voltage
VBE(SAT)*
IC=8A, IB=100mA
IC=10A, IB=250mA
IC=12A, IB=300mA
2.2
2.5
2.7
V
DC Current Gain
hFE*
VCE=10V, IC=5A
300
Diode Forward Voltage
VF
IF=10A
2.5
V
Functional Test
VCC=24V, VCLAMP=400V, L=7mH
(see Functional Test Circuit)
10
A
Fall Time
tF
0.5
Storage Time
tS
VCC=12V, VCLAMP=300V, VBE=0,
RBE=47Ω, L=7mH, IC=7A, IB=70mA
(see Fig.2)
15
μs
* Pulsed: Pulse duration=300μs, duty cycle 1.5%



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