công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

Preview PDF HTML

2SC3468G-X-AB3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện 2SC3468G-X-AB3-R
Giải thích chi tiết về linh kiện  HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC3468G-X-AB3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

  2SC3468G-X-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SC3468G-X-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SC3468G-X-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SC3468G-X-AB3-R Datasheet HTML 4Page - Unisonic Technologies 2SC3468G-X-AB3-R Datasheet HTML 5Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R208-037.B
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-to-Base Voltage
VCBO
300
V
Collector-to-Emitter Voltage
VCEO
300
V
Emitter-to-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Collector Current (Pulse)
ICP
200
mA
Collector Dissipation
PC
1.0
W
Junction Temperature
TJ
0 ~ +125
°C
Storage Temperature
TSTG
-65 ~ +125
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0
°C ~70°C operating temperature
range and assured by design from –20
°C ~85°C.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cutoff Current
ICBO
VCB = 200V, IE = 0
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
0.1
µA
DC Current Gain
hFE
VCE = 10V, IC = 10mA
40
320
Gain-Bandwidth Product
fT
VCE = 30V, IC = 10mA
150
MHz
Collector-to-Emitter Saturation Voltage
VCE (sat)
IC = 20mA, IB = 2mA
0.6
V
Base-to-Emitter Saturation Voltage
VBE (sat)
IC = 20mA, IB = 2mA
1.0
V
Collector-to-Base Breakdown Voltage
V(BR) CBO
IC = 10µA, IE = 0
300
V
Collector-to-Emitter Breakdown Voltage
V(BR) CEO
IC = 1mA, RBE = ∞
300
V
Emitter-to-Base Breakdown Voltage
V(BR) EBO
IE = 10µA, IC = 0
5
V
Output Capacitance
Cob
VCB = 30V, f = 1MHz
2.6
pF
Reverse Transfer Capacitance
Cre
VCB = 30V, f = 1MHz
1.8
pF
CLASSIFICATION of hFE
RANK
C
D
E
F
RANGE
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 320



Html Pages

1 2 3 4 5


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com