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MIC7111 bảng dữ liệu(PDF) 5 Page - Micrel Semiconductor |
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MIC7111 bảng dữ liệu(HTML) 5 Page - Micrel Semiconductor |
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5 / 8 page ![]() June 1998 5 MIC7111 MIC7111 Micrel Symbol Parameter Condition Min Typ Max Units I B Input Bias Current 110 pA 500 pA I OS Input Offset Current 0.01 0.5 pA 75 pA R IN Input Resistance >10 T Ω +PSRR Positive Power Supply 5V ≤ V V+ ≤ 10V, VV– = 0V, 65 95 dB Rejection Ratio V CM = VOUT = 2.5V –PSRR Negative Power Supply –5V ≤ V V– ≤ –10V, VV+ = 0V, 65 95 dB Rejection Ratio V CM = VOUT = –2.5V CMRR Common-Mode Rejection Ratio V CM = –0.2V to +10.2V 60 85 dB C IN Common Mode Input Capacitance 3 pF V OUT Output Voltage Swing output high, R L = 100k, 0.45 2.5 mV specified as V V+ – VOUT 2.5 mV output low, R L = 100k 0.45 2.5 mV 2.5 mV output high, R L = 2k, 24 80 mV specified as V V+ – VOUT 120 mV output low, R L = 2k 24 80 mV 120 mV I SC Output Short Circuit Current sourcing, V OUT = 0V 100 200 mA Note 6 sinking, V OUT = 10V 100 200 mA A VOL Voltage Gain sourcing 500 V/mV sinking 500 V/mV I S Supply Current V V+ = 10V, VOUT = VV+/2 25 65 µA AC Electrical Characteristics (10V) V+ = +10V, V– = 0V, V CM = VOUT = VV+/2; RL = 1M; TJ = 25°C, bold values indicate –40°C ≤ TJ ≤ +85°C; unless noted Symbol Parameter Condition Min Typ Max Units SR Slew Rate voltage follower, 1V step, R L = 100k@1.35V 0.02 V/ µs V OUT = 1VP–P GBW Gain Bandwidth Product 25 kHz φ M Phase Margin 50 ° G M Gain Margin 15 dB e N Input Referred Voltage Noise f = 1kHz, V CM = 1.0V 110 nV/ Hz i N Input Referred Current Noise f = 1kHz 0.03 pA/ Hz General Notes: Devices are ESD protected; however, handling precautions are recommended. All limits guaranteed by testing on statistical analysis. Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside its recommended operating ratings. Note 2: I/O Pin Voltage is any external voltage to which an input or output is referenced. Note 3: The maximum allowable power dissipation is a function of the maximum junction temperature, T J(max); the junction-to-ambient thermal resistance, θ JA; and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: P D = (TJ(max) – TA) ÷ θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature. Note 4: Thermal resistance, θ JA, applies to a part soldered on a printed-circuit board. Note 5: Human body model, 1.5k in series with 100pF. Note 6: Short circuit may cause the device to exceed maxium allowable power dissipation. See Note 3. |
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