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MIC5022 bảng dữ liệu(PDF) 4 Page - Micrel Semiconductor

tên linh kiện MIC5022
Giải thích chi tiết về linh kiện  Half-Bridge MOSFET Driver
PDF  9 Pages
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nhà sản xuất  MICREL [Micrel Semiconductor]
Trang chủ  http://www.micrel.com
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MIC5022 bảng dữ liệu(HTML) 4 Page - Micrel Semiconductor

  MIC5022 Datasheet HTML 1Page - Micrel Semiconductor MIC5022 Datasheet HTML 2Page - Micrel Semiconductor MIC5022 Datasheet HTML 3Page - Micrel Semiconductor MIC5022 Datasheet HTML 4Page - Micrel Semiconductor MIC5022 Datasheet HTML 5Page - Micrel Semiconductor MIC5022 Datasheet HTML 6Page - Micrel Semiconductor MIC5022 Datasheet HTML 7Page - Micrel Semiconductor MIC5022 Datasheet HTML 8Page - Micrel Semiconductor MIC5022 Datasheet HTML 9Page - Micrel Semiconductor  
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September 1999
181
MIC5022
MIC5022
Micrel
Electrical Characteristics
T
A = 25°C, Gnd = 0V, VDD = 12V, Gate CL = 1500pF (IRF540 MOSFET) unless otherwise specificed
Symbol
Parameter
Condition
Min
Typ
Max
Units
D.C. Supply Current
V
DD = 12V, Input = 0V
2.5
5
mA
V
DD = 36V, Input = 0V
6.0
10
mA
V
DD = 12V, Input = 5V
2.4
5
mA
V
DD = 36V, Input = 5V
3.0
25
mA
Input Threshold
0.8
1.4
2.0
V
Input Hysteresis
0.1
V
Input Pull-Down Current
Input = 5V
10
20
40
µA
Enable Threshold
0.8
1.4
2.0
V
Enable Hysteresis
0.1
V
Fault Output
Fault Current = 1.6mA
0.15
0.4
V
Saturation Voltage
Note 1
Fault Output Leakage
Fault = 36V
–1
0.01
+1
µA
Current Limit Thresh., Low-Side
Note 2
30
50
70
mV
Current Limit Thresh., High-Side
Note 2
30
50
70
mV
Gate On Voltage, High-Side
V
DD = 12V, Note 3
16
18
21
V
V
DD = 36V, Note 3
46
49
52
V
Gate On Voltage, Low-Side
V
DD = 12V, Note 3
10
11
V
V
DD = 36V, Note 3
14
15
18
V
t
G(ON)
Gate On Time, Fixed
Sense Differential > 70mV
2
5
10
µs
t
G(OFF)
Gate Off Time, Adjustable
Sense Differential > 70mV, C
T = 0pF
10
20
50
µs
t
DLH
Gate Turn-On Delay, High-Side
Note 4
1.4
2.0
µs
t
R
Gate Rise Time, High-Side
Note 5
0.8
1.5
µs
t
DHL
Gate Turn-Off Delay, High-Side
Note 6
1.2
2.0
µs
t
F
Gate Fall Time, High-Side
Note 7
0.6
1.5
µs
t
DLH
Gate Turn-On Delay, Low-Side
Note 4
1.7
2.5
µs
t
R
Gate Rise Time, Low-Side
Note 8
0.7
1.5
µs
t
DHL
Gate Turn-Off Delay, Low-Side
Note 9
0.5
1.0
µs
t
F
Gate Fall Time, Low-Side
Note 10
1.0
1.5
µs
Note 1
Voltage remains low for time affected by C
T.
Note 2
When using sense MOSFETs, it is recommended that R
SENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio.
Note 3
DC measurement.
Note 4
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Note 5
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V.
Note 6
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V.
Note 7
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V.
Note 8
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 10V.
Note 9
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 15V (Gate on voltage) to 10V.
Note 10 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 10V to 2V.



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