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HJ44H11L-AA3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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HJ44H11L-AA3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() HJ44H11 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R209-024.D ABSOLUTE MAXIMUM RATINGS (TA=25℃) PARAMETER SYMBOL RATINGS UNIT Collector- Emitter Voltage VCEO 80 V Collector-Emitter Voltage VCES 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 8 A Base Current IB 5 A Power Dissipation (TC=25℃) SOT-223 PD 5 W TO-220 65 TO-252 20 Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55~+150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25℃) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVCEO IC=30mA, IB=0 80 V Collector-Emitter Breakdown Voltage BVCES IC=1mA, IB=0 80 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V Collector Cut-Off Current ICES VCB=80V, VEB=0 10 uA Emitter Cut-off Current IEBO VEB=5V, IC=0 50 uA Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=8A, IB=0.4A 1 V Base-Emitter Saturation Voltage(Note) VBE(SAT) IC=8A, IB=0.8A 1.5 V DC Current Gain (Note) hFE1 VCE=1V, IC=2A 60 hFE2 VCE=1V, IC=4A 40 Output Capacitance COB VCB=10V 130 pF Transition Frequency fT VCE=10V, IC=500mA, f=20MHz 50 MHz Note: Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% |
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