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MJE3055TG-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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MJE3055TG-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() MJE3055T NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R203-011.D ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V TO-220 75 W Total Power Dissipation TO-251/TO-252 PD 20 W Collector Current IC 10 A Base Current IB 6 A Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVCEO IC=200mA 60 V Collector-Base Breakdown Voltage BVCBO IC=10mA 70 V Emitter-Base Breakdown Voltage BVEBO IE=10mA 5 V ICBO VCB=70V 1 mA ICEO VCE=30V 700 μA Collector Cut-off Current ICEX VCE=70V, VEB(OFF)=1.5V 1 mA Emitter Cut-off Current IEBO VEB=5V 5 mA VCE(SAT)1 IC=4A, IB=0.4A 1.1 V Collector-Emitter Saturation Voltage (Note) VCE(SAT)2 IC=10A, IB=3.3A 8 V Base-Emitter on Voltage VBE(ON) VCE=4V, IC=4A 1.8 V hFE1 VCE=4V , IC=4A 20 100 DC Current Gain (Note) hFE2 VCE=4V , IC=10A 5 Current Gain Bandwidth Product fT VCE=10V, IC=0.5A, f=1MHz 2 MHZ Note: Pulse test: PW ≤ 300μs, duty cycle ≤ 2%. |
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