BC857G-X-AL3-R datasheet(2/4 Pages) UTC

2 / 4 page

BC856/BC857/BC858

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-028.F



ABSOLUTE MAXIMUM RATINGS (T

A=25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

BC856

VCBO

-80

BC857

-50

BC858

-30

Collector-Emitter Voltage

BC856

VCEO

-65

BC857

-45

BC858

-30

Emitter-Base Voltage

VEBO

-5

Collector Dissipation

310

Collector Current (DC)

-100

Junction Temperature

+150

C

Storage Temperature

TSTG

-40 ~ +150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

A=25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Cut-Off Current

ICBO

VCB=-30V, IE=0

-15

DC Current Gain

hFE

VCE=-5V, IC=-2mA

110

800

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-10mA,IB=-0.5mA

-90

-300

IC=-100mA,IB=-5mA

-250

-650

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-10mA,IB=-0.5mA

-700

IC=-100mA,IB=-5mA

-900

Base-Emitter On Voltage

VBE(ON)

VCE=-5V,IC=-2mA

-600

-660

-750

VCE=-5V,IC=-10mA

-800

Current Gain Bandwidth Product

VCE=-5V,IC=-10mA, f=100MHz

150

MHz

Output Capacitance

Cob

VCB=-10V,IE=0,f=1MHz

Noise Figure

VCE=-5V, IC=-200A, f=1KHz, RG=2K



CLASSIFICATION OF hFE

RANK

RANGE

110-220

200-450

420-800

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