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2SD965G-X-AB3-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies |
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2SD965G-X-AB3-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies |
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3 / 5 page ![]() 2SD965/A NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R209-007.F ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage 2SD965 VCEO 20 V 2SD965A 30 V Emitter-Base Voltage VEBO 7 V Collector Dissipation SOT-89 PC 500 mW TO-92 750 mW TO-252 1 W Collector Current IC 5 A Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 40 V Collector-Emitter Breakdown Voltage 2SD965 BVCEO IC=1mA, IB=0 20 V 2SD965A 30 V Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 7 V Collector Cut-off Current ICBO VCB=10V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=7V, IC=0 100 nA DC Current Gain hFE1 VCE=2V, IC=1mA 200 hFE2 VCE=2V, IC=0.5A 230 800 hFE3 VCE=2V, IC=2A 150 Collector-Emitter Saturation Voltage VCE(SAT) IC=3A, IB= 0.1A 1 V Current Gain Bandwidth Product fT VCE=6V, IC=50mA 150 MHz Output Capacitance Cob VCB=20V, IE=0, f=1MHz 50 pF CLASSIFICATION OF hFE2 RANK Q R S RANGE 230-380 340-600 560-800 |
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