2SC3838G-X-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

2SC3838

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R220-018.D



ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector current

Collector power dissipation

0.2

Junction Temperature

+150

C

Storage Temperature

TSTG

-55 ~ +150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-base breakdown voltage

BVCBO IC=10μA

Collector-emitter breakdown voltage

BVCEO IC=1mA

Emitter-base breakdown voltage

BVEBO IE=10μA

Collector cutoff current

ICBO

VCB=10V

0.5

μA

Emitter cutoff current

IEBO

VEB=2V

0.5

μA

Collector-emitter saturation voltage

VCE(SAT) IC =10mA, IB= 5mA

0.5

DC current transfer ratio

hFE

VCE=10V, IC =5mA

400

Transition frequency

VCE=10V, IE=10mA, f=500MHz

1.4

3.2

GHz

Output capacitance

Cob

VCB=10V, IE=0A, f=1MHz

0.8

1.5

Collector-base time constant

rbb’·Cc VCB=10V, IC=10mA, f=31.8MHz

Noise factor

VCE=6V, IC=2mA, f=500MHz, Rg=50Ω

3.5



CLASSIFICATION of hFE

RANK

RANGE

56 ~ 110

100 ~ 170

120 ~ 270

250 ~ 400

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