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MX28F2000P bảng dữ liệu(PDF) 13 Page - Macronix International

tên linh kiện MX28F2000P
Giải thích chi tiết về linh kiện  2M-BIT [256K x 8] CMOS FLASH MEMORY
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P/N: PM0380
REV. 1.5, OCT 29, 1998
MX28F2000P
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
DC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 10%, VPP = 12.0V ± 5%
SYMBOL
PARAMETER
MIN.
TYP
MAX.
UNIT
CONDITIONS
ILI
Input Leakage Current
10
uA
VIN=GND to VCC
ILO
Output Leakage Current
10
uA
VOUT=GND to VCC
ISB1
Standby VCC current
1
mA
CE=VIH
ISB2
1
100
uA
CE=VCC ± 0.3V
ICC1 (Read)
Operating VCC Current
30
mA
IOUT=0mA, f=1MHz
ICC2
50
mA
IOUT=0mA, F=11MHz
ICC3 (Program)
50
mA
In Programming
ICC4 (Erase)
50
mA
In Erase
ICC5 (Program Verify)
50
mA
In Program Verify
ICC6 (Erase Verify)
50
mA
In Erase Verify
IPP1 (Read)
VPP Current
100
uA
VPP=12.6V
IPP2 (Program)
50
mA
In Programming
IPP3 (Erase)
50
mA
In Erase
IPP4 (Program Verify)
50
mA
In Program Verify
IPP5 (Erase Verify)
50
mA
In Erase Verify
VIL
Input Voltage
-0.3 (Note 5)
0.8
V
VIH
2.4
VCC+0.3V V
(Note 6)
VOL
Output Voltage
0.45
V
IOL=2.1mA
VOH
2.4
V
IOH=-400uA
NOTES:
1. VCC must be applied before VPP and removed after VPP.
2. VPP must not exceed 14V including overshoot.
3. An influence may be had upon device reliability if the device
is installed or removed while VPP=12V.
4. Do not alter VPP either VIL to 12V or 12V to VIL when
CE=VIL.
5. VIL min. = -0.6V for pulse width < 20ns.
6. If VIH is over the specified maximum value, programming
operation cannot be guranteed.
7. All currents are in RMS unless otherwise noted.(Sampled, not
100% tested.)



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