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CSD87384M bảng dữ liệu(PDF) 3 Page - Texas Instruments

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Giải thích chi tiết về linh kiện  CSD87384M Synchronous Buck NexFET??Power Block II
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CSD87384M bảng dữ liệu(HTML) 3 Page - Texas Instruments

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CSD87384M
www.ti.com
SLPS415D – SEPTEMBER 2013 – REVISED MARCH 2015
5 Specifications
5.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise noted)
(1)
MIN
MAX
UNIT
VIN to PGND
–0.8
30
VSW to PGND
30
Voltage
VSW to PGND (10 ns)
32
V
TG to VSW
–8
10
BG to PGND
–8
10
IDM
Pulsed Current Rating(2)
95
A
PD
Power Dissipation(3)
8
W
Sync FET, ID = 68, L = 0.1 mH
231
EAS
Avalanche Energy
mJ
Control FET, ID = 31, L = 0.1 mH
48
TJ
Operating Junction
–55
150
°C
Tstg
Storage Temperature Range
–55
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability.
(2)
Pulse Duration
≤50 µs, duty cycle ≤0.01
(3)
Device mounted on FR4 material with 1 inch2 (6.45 cm2) Cu
5.2 Recommended Operating Conditions
TA = 25°C (unless otherwise noted)
MIN
MAX
UNIT
VGS
Gate Drive Voltage
4.5
8
V
VIN
Input Supply Voltage
24
V
ƒSW
Switching Frequency
CBST = 0.1 μF (min)
200
1500
kHz
No Airflow
30
A
Operating Current
With Airflow (200 LFM)
35
A
With Airflow + Heat Sink
40
A
TJ
Operating Temperature
125
°C
5.3 Power Block Performance
TA = 25°C (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 12 V, VGS = 5 V
VOUT = 1.3 V, IOUT = 25 A
PLOSS
Power Loss(1)
3.7
W
fSW = 500 kHz
LOUT = 0.3 µH, TJ = 25ºC
TG to TGR = 0 V
IQVIN
VIN Quiescent Current
10
µA
BG to PGND = 0 V
(1)
Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and
using a high current 5 V driver IC.
Copyright © 2013–2015, Texas Instruments Incorporated
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