BFS540_15 datasheet(2/12 Pages) JMNIC

2 / 12 page

2000 May 30

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFS540

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability

• SOT323 package.

APPLICATIONS

RF wideband amplifier applications

such as satellite TV systems and RF

portable communication equipment

with signal frequencies up to 2 GHz.

DESCRIPTION

NPN transistor in a SOT323 plastic

package.

PINNING

DESCRIPTION

base

emitter

collector

Fig.1 SOT323.

handbook, 2 columns

MBC870

Top view

Marking code: N4.

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector tab.

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage

open base

−−

DC collector current

−−

120

Ptot

total power dissipation

Ts ≤ 80 °C; note 1

−−

500

hFE

DC current gain

IC = 40 mA; VCE =8V; Tj =25 °C

100

120

250

transition frequency

IC = 40 mA; VCE = 8 V; f = 1 GHz;

Tamb =25 °C

−

GHz

GUM

maximum unilateral power gain

IC = 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25 °C

−

noise ﬁgure

IC = 10 mA; VCE = 8 V; f = 900 MHz;

Tamb =25 °C

−

1.3

1.7

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCES

collector-emitter voltage

RBE =0

−

VEBO

emitter-base voltage

open collector

−

2.5

DC collector current

−

120

Ptot

total power dissipation

Ts ≤ 80 °C; note 1

−

500

Tstg

storage temperature

−65

150

°C

junction temperature

−

175

°C

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