BFG591_15 datasheet(2/12 Pages) JMNIC

2 / 12 page

1995 Sep 04

Philips Semiconductors

Product speciﬁcation

NPN 7 GHz wideband transistor

BFG591

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

APPLICATIONS

Intended for applications in the GHz

range such as MATV or CATV

amplifiers and RF communications

subscriber equipment.

DESCRIPTION

NPN silicon planar epitaxial transistor

in a plastic, 4-pin SOT223 package.

PINNING

DESCRIPTION

emitter

base

emitter

collector

Fig.1 SOT223.

fpage

123

MSB002 - 1

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage

open base

−−

collector current (DC)

−−

200

Ptot

total power dissipation

up to Ts =80 °C; note 1

−−

hFE

DC current gain

IC = 70 mA; VCE = 8 V

250

Cre

feedback capacitance

IC =Ic = 0; VCE = 12 V; f = 1 MHz

−

0.7

−

transition frequency

IC = 70 mA; VCE =12V; f=1GHz

−

GHz

GUM

maximum unilateral

power gain

IC = 70 mA; VCE =12V;

f = 900 MHz; Tamb =25 °C

−

insertion power gain

IC = 70 mA; VCE =12V;

f = 900 MHz; Tamb =25 °C

−

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