UH8013G-AE3-R datasheet(3/4 Pages) UTC

3 / 4 page

UH8103

Preliminary

BiCMOS IC

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-513.b



ABSOLUTE MAXIMUM RATING (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VDD

Magnetic Flux Density

Unlimited

Output current

IOUT

Package Power Dissipation

230

Junction Temperature

150

°C

Operation Temperature

TOPR

-40 ~ +85

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



RECOMMENDED OPERATING CONDITIONS (TA=25°C)

PARAMETER

SYMBOL

Conditions

MIN

TYP

MAX

UNIT

Supply Voltage

VDD

Operating

2.5

---

5.5



ELECTRICAL CHARACTERISTICS (TA=25°C, VDD=3V)

PARAMETER

SYMBOL

Conditions

MIN

TYP

MAX

UNIT

Supply Voltage Range

VDD

Operating

2.5

5.5

Supply Current

IDD

Average

μA

Awake

1.2

Sleep

μA

Output Leakage Current

IOFF

VOUT = 3.5V,

BRPN<B<BRPS

μA

Output Low Voltage

VOL

ISINK = 1mA

Wake up Time

tawake

180

μS

Period

tperiod

Duty cycle

d.c.

0.3



MAGNETIC CHARACTERISTICS ( TA=25°C, VDD=3V, 1mT=10Gauss )

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Operation Points

BOPS

Gauss

BOPN

-75

-50

Release Points

BRPS

BRPN

-35

-10

Hysteresis

Bhys

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