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BF1211 bảng dữ liệu(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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Giải thích chi tiết về linh kiện  N-channel dual-gate MOS-FETs
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BF1211 bảng dữ liệu(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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2003 Dec 16
2
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
FEATURES
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier
• Excellent low frequency noise performance
• Partly internal self-biasing circuit to ensure good
cross-modulation performance during AGC and good
DC stabilization.
APPLICATIONS
• Gain controlled low noise VHF and UHF amplifiers for
5 V digital and analog television tuner applications.
DESCRIPTION
Enhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1211, BF1211R and BF1211WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
PINNING
PIN
DESCRIPTION
1
source
2
drain
3
gate 2
4
gate 1
handbook, 2 columns
Top view
MSB014
12
3
4
Fig.1
Simplified outline (SOT143B).
BF1211 marking code: LFp
handbook, 2 columns
Top view
MSB035
1
2
4
3
Fig.2
Simplified outline (SOT143R).
BF1211R marking code: LHp
handbook, halfpage
Top view
MSB842
21
4
3
Fig.3
Simplified outline (SOT343R).
BF1211WR marking code: MK
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−−
6V
ID
drain current
−−
30
mA
Ptot
total power dissipation
−−
180
mW
yfs
forward transfer admittance
25
30
40
mS
Cig1-ss
input capacitance at gate 1
−
2.1
2.6
pF
Crss
reverse transfer capacitance
f = 1 MHz
−
15
30
fF
F
noise figure
f = 400 MHz
−
0.9
1.6
dB
Xmod
cross-modulation
input level for k = 1% at
40 dB AGC
100
105
−
dB
µV
Tj
junction temperature
−−
150
°C



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