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MAX771C/D bảng dữ liệu(PDF) 17 Page - Maxim Integrated Products |
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MAX771C/D bảng dữ liệu(HTML) 17 Page - Maxim Integrated Products |
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17 / 20 page ![]() The two most significant losses contributing to the N-FET’s power dissipation are I2R losses and switching losses. Select a transistor with low rDS(ON) and low CRSS to minimize these losses. Determine the maximum required gate-drive current from the Qg specification in the N-FET data sheet. The MAX773’s maximum allowed switching frequency during normal operation is 300kHz; but at start-up the maximum frequency can be 500kHz, so the maximum current required to charge the N-FET’s gate is f(max) x Qg(typ). Use the typical Qg number from the transistor data sheet. For example, the Si9410DY has a Qg(typ) of 17nC (at VGS = 5V), therefore the current required to charge the gate is: IGATE (max) = (500kHz) (17nC) = 8.5mA. The bypass capacitor on V+ (C2) must instantaneously furnish the gate charge without excessive droop (e.g., less than 200mV): Qg ∆V+ = —— C2 Continuing with the example, ∆V+ = 17nC/0.1µF = 170mV. Use IGATE when calculating the appropriate shunt resistor. See the Shunt Regulator Operation section. Figure 2a’s application circuit uses an MTD3055EL logic-level N-FET with a guaranteed threshold voltage (VTH) of 2V. Figure 2b’s application circuit uses an 8-pin Si9410DY surface-mount N-FET that has 50m Ω on resistance with 4.5V VGS, and a guaranteed VTH of less than 3V. NPN Transistors The MAX773 can drive NPN transistors, but be extremely careful when determining the base-current requirements. Too little base current can cause exces- sive power dissipation in the transistor; too much base current can cause the base to oversaturate, so the tran- sistor remains on continually. Both conditions can dam- age the transistor. When using the MAX773 with an NPN transistor, con- nect EXTL to the transistor’s base, and connect RBASE between EXTH and the base (Figure 8c). To determine the required peak inductor current, IC(PEAK), observe the Typical Operating Characteristics efficiency graphs and the theoretical output current capability vs. input voltage graphs to determine a sense resistor that will allow the desired output current. Divide the 170mV worst-case (smallest) voltage across the current-sense amplifier VCS(max) by the sense- resistor value. To determine IB, set the peak inductor current (ILIM) equal to the peak transistor collector cur- rent IC(PEAK). Calculate IB as follows: IB = ILIM/ß Use the worst-case (lowest) value for ß given in the transistor’s electrical specification, where the collector current used for the test is approximately equal to ILIM. It may be necessary to use even higher base currents (e.g., IB = ILIM /10), although excessive IB may impair operation by extending the transistor’s turn-off time. RBASE is determined by: (VEXTH - VBE - VCS(min)) RBASE = ————————————– IB Where VEXTH is the voltage at V+ (in bootstrapped mode VEXTH is the output voltage), VBE is the 0.7V transistor base-emitter voltage, VCS(min) is the voltage drop across the current-sense resistor, and IB is the minimum base current that forces the transistor into saturation. This equation reduces to (V+ - 700mV - 170mV) / IB. For maximum efficiency, make RBASE as large as pos- sible, but small enough to ensure the transistor is always driven near saturation. Highest efficiency is obtained with a fast-switching NPN transistor (fT ≥ 150MHz) with a low collector-emitter saturation voltage and a high current gain. A good transistor to use is the Zetex ZTX694B. Diode Selection The MAX770–MAX773’s high switching frequency demands a high-speed rectifier. Schottky diodes such as the 1N5817–1N5822 are recommended. Make sure that the Schottky diode’s average current rating exceeds the peak current limit set by RSENSE, and that its breakdown voltage exceeds VOUT. For high-temper- ature applications, Schottky diodes may be inadequate due to their high leakage currents; high-speed silicon diodes may be used instead. At heavy loads and high temperatures, the benefits of a Schottky diode’s low for- ward voltage may outweigh the disadvantages of its high leakage current. Capacitor Selection Output Filter Capacitor The primary criterion for selecting the output filter capacitor (C2) is low effective series resistance (ESR). The product of the peak inductor current and the output filter capacitor’s ESR determines the amplitude of the ripple seen on the output voltage. An OS-CON 300µF, 6.3V output filter capacitor has approximately 50m Ω of ESR and typically provides 180mV ripple when stepping up from 3V to 5V at 1A (Figure 2a). 5V/12V/15V or Adjustable, High-Efficiency, Low IQ, Step-Up DC-DC Controllers ______________________________________________________________________________________ 17 |
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