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USB4S012L-AG6-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies |
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USB4S012L-AG6-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() USB4S012 Preliminary TVS UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R215-010.a ABSOLUTE MAXIMUM RATING over operating free-air temperature range (unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT VBUS Voltage Tolerance VBUS pin -0.3~20 V IO Voltage Tolerance D+, D–, ID pins -0.3~6 V IEC 61000-4-2 Contact Discharge D+, D–, ID ±10 kV IEC 61000-4-2 Air-Gap Discharge D+, D–, ID ±10 kV IEC 61000-4-2 Contact Discharge VBUS pin ±10 kV IEC 61000-4-2 Air-Gap Discharge VBUS pin ±9 kV Peak pulse power (tp = 8/20 μs) D+, D–, ID, VBUS pins 60 W Peak pulse current (tp = 8/20 μs) D+, D–, ID, VBUS pins 3 A Storage Temperature Range TSTG -65~125 °C Operating Free-Air Temperature Range TA -40~85 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VBUS Operating Current IVBUS VBUS=5V D+, D–, ID pins open μA VBUS=19V 0.1 0.5 IO Port Current IIO VIO=2.5V, VBUS=5V D+, D–, ID pins 0.1 0.5 μA Diode Forward Voltage VD IIO=8mA D+, D–, ID pins (lower clamp diode) 0.6 0.8 0.95 V VBUS Pin Capacitance CVBUS VBUS=5V 11 15 pF IO Capacitance CIO VIO=2.5V D+, D–, ID pins (DRY package) 0.8 1 pF Dynamic Resistance RDYN IIO=1.5A D+, D–, ID, and VBUS pins, including central clamp dioded during positive ESD pulse 1.2 Ω IIO=1A D+, D–, ID, and VBUS pins, including central clamp diode during negative ESD pulse 1 Breakdown Voltage VBR IIO=1mA D+, D–, ID pins 6 9 V VBUS pin(s) 20 24 |
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