MTP4435AV8 datasheet(2/9 Pages) CYSTEKEC

2 / 9 page

CYStech Electronics Corp.

Spec. No. : C107V8

Issued Date : 2015.07.22

Revised Date :

Page No. : 2/9

MTP4435AV8

CYStek Product Specification

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

±25

Continuous Drain Current @ TC=25

°C, VGS=-10V

-38

Continuous Drain Current @ TC=100

°C, VGS=-10V

-24

Continuous Drain Current @ TA=25

°C, VGS=-10V

-12.3

Continuous Drain Current @ TA=70

°C, VGS=-10V

-9.8

Pulsed Drain Current

IDM

-80 *1

Avalanche Current

IAS

-12.3

Avalanche Energy @ L=1mH, ID=-12.3A, VDD=-30V

EAS

75.6

Repetitive Avalanche Energy @ L=0.05mH

EAR

2.5 *2

TC=25℃

TC=100℃

TA=25℃

3.1 *3

Total Power Dissipation

TA=70℃

1.9 *3

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

Rth,j-c

4.2

°C/W

Thermal Resistance, Junction-to-ambient, max

Rth,j-a

40 *3

°C/W

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle≤1%

3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125

°C/W when mounted on minimum copper pad.

Electrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

-30

VGS=0V, ID=-250μA

VGS(th)

-1

-2.5

VDS=VGS, ID=-250μA

IGSS

±100

VGS=±25V, VDS=0V

-1

VDS=-24V, VGS=0V

IDSS

-10

μA

VDS=-24V, VGS=0V, Tj=125

°C

11.7

VGS=-10V, ID=-10A

RDS(ON) *1

17.6

VGS=-5V, ID=-7A

GFS

VDS=-5V, ID=-10A

Dynamic

Ciss

1552

Coss

188

Crss

170

VDS=-15V, VGS=0V, f=1MHz

MTP4435AV8 bảng dữ liệu(PDF) 2 Page - Cystech Electonics Corp.

MTP4435AV8 bảng dữ liệu(HTML) 2 Page - Cystech Electonics Corp.

Html Pages

1 2 3 4 5 6 7 8 9

bảng dữ liệu tải về

Link URL