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IRHM9064 bảng dữ liệu(PDF) 2 Page - International Rectifier

tên linh kiện IRHM9064
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IRHM9064 bảng dữ liệu(HTML) 2 Page - International Rectifier

  IRHM9064 Datasheet HTML 1Page - International Rectifier IRHM9064 Datasheet HTML 2Page - International Rectifier IRHM9064 Datasheet HTML 3Page - International Rectifier IRHM9064 Datasheet HTML 4Page - International Rectifier IRHM9064 Datasheet HTML 5Page - International Rectifier IRHM9064 Datasheet HTML 6Page - International Rectifier IRHM9064 Datasheet HTML 7Page - International Rectifier IRHM9064 Datasheet HTML 8Page - International Rectifier  
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IRHM9064
Pre-Irradiation
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-60
—
—
V
VGS = 0V, ID =-1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
—
-0.056
—
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
—
0.050
VGS = -12V, ID = -30A➃
Resistance
—
—
0.053
Ω
VGS = -12V, ID = -35A➃
VGS(th)
Gate Threshold Voltage
-2.0
—
-4.0
V
VDS = VGS, ID = -1.0mA
gfs
Forward Transconductance
18
—
—
S ( )
VDS >-15V, IDS = -30A ➃
IDSS
Zero Gate Voltage Drain Current
—
—
-25
VDS= -48V ,VGS=0V
—
—
-250
VDS = -48V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
—
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
—
—
100
VGS = 20V
Qg
Total Gate Charge
—
—
300
VGS =-12V, ID = -35A
Qgs
Gate-to-Source Charge
—
—
70
nC
VDS = -30V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
—
91
td(on)
Turn-On Delay Time
—
—
35
VDD = -30V, ID = -35A,
tr
Rise Time
—
—
150
VGS =-12V, RG = 2.35Ω
td(off)
Turn-Off Delay Time
—
—
200
tf
Fall Time
—
—
200
LS + LD
Total Inductance
—
6.8
—
Ciss
Input Capacitance
—
6700
—
VGS = 0V, VDS = -25V
Coss
Output Capacitance
—
2800
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
920
—
nA
nH
ns
µA
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
—
0.50
RthCS
Case-to-Sink
—
0.21
—
RthJA
Junction-to-Ambient
—
—
48
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
—
-35*
ISM
Pulse Source Current (Body Diode) ➀
—
—
-140
VSD
Diode Forward Voltage
—
—
-3.0
V
Tj = 25°C, IS = -35A, VGS = 0V ➃
trr
Reverse Recovery Time
—
—
270
nS
Tj = 25°C, IF = -35A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge
—
—
2.5
µC
VDD ≤ -50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
°C/W
*Current is limited by internal wire diameter



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