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MAX2601ESA bảng dữ liệu(PDF) 2 Page - Maxim Integrated Products |
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MAX2601ESA bảng dữ liệu(HTML) 2 Page - Maxim Integrated Products |
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2 / 6 page ![]() dBc 3.6V, 1W RF Power Transistors for 900MHz Applications 2 _______________________________________________________________________________________ ABSOLUTE MAXIMUM RATINGS DC ELECTRICAL CHARACTERISTICS (TA = TMIN to TMAX, unless otherwise noted.) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Collector-Emitter Voltage, Shorted Base (VCES) ....................17V Emitter Base Reverse Voltage (VEBO)...................................2.3V BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V Average Collector Current (IC)........................................1200mA Continuous Power Dissipation (TA = +70°C) PSOPII (derate 80mW/°C above +70°C) (Note 1) ..........6.4W Operating Temperature Range ...........................-40°C to +85°C Storage Temperature Range .............................-65°C to +165°C Junction Temperature ......................................................+150°C Lead Temperature (soldering, 10sec) .............................+300°C IC < 100µA V 5.0 LVCEO Collector-Emitter Sustaining Voltage V 15 BVCES 15 BVCEO Collector-Emitter Breakdown Voltage 100 hFE DC Current Gain µA 0.05 1.5 ICES Collector Cutoff Current pF 9.6 COB Output Capacitance UNITS MIN TYP MAX SYMBOL PARAMETER Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section). IC = 200mA Shorted base Open base IC = 250mA, VCE = 3V VCE = 6V, VBE = 0V VCB = 3V, IE = 0mA, f = 1MHz CONDITIONS dB 3.3 NF Noise Figure dBc -25 IM5 Two-Tone IMR -16 IM3 8:1 VSWR Stability under Continuous Load Mismatch Conditions % 58 η Collector Efficiency dB 11.6 Power Gain -42 2fo, 3fo Harmonics -43 mA 4.2 IB Base Current GHz DC 1 f Frequency Range UNITS MIN TYP MAX SYMBOL PARAMETER VBB = 0.9V POUT = +30dBm total power, f1 = 835MHz, f2 = 836MHz VCC = 3.6V, POUT = 30dBm VCC = 5.5V, all angles (Note 3) (Note 2) No modulation POUT = 30dBm CONDITIONS AC ELECTRICAL CHARACTERISTICS (Test Circuit of Figure 1, VCC = 3.6V, VBB = 0.750V, ZLOAD = ZSOURCE = 50Ω, POUT = 30dBm, f = 836MHz, TA = +25°C, unless oth- erwise noted.) Note 2: Guaranteed by design. Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation capability is observed. V 15 BVCBO Collector-Base Breakdown Voltage IC < 100µA, emitter open VCC = 3.0V, POUT = 29dBm dBc |
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