Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

ƒ

75

100

°C/W

These P-Channel MOSFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized

the designer with an extremely efficient and reliable device for use in battery

and load management.

A thermally enhanced large pad leadframe has been incorporated into the

standard SOT-23 package to produce a HEXFET Power MOSFET with the

industry's smallest footprint. This package, dubbed the Micro3

™, is ideal

for applications where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin

application environments such as portable electronics and PCMCIA

cards. The thermal resistance and power dissipation are the best available.

Thermal Resistance

Description

Parameter

Max.

Units

Drain- Source Voltage

-20

V

-3.7

-2.2

A

Pulsed Drain Current



-22

Power Dissipation

1.3

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

Single Pulse Avalanche Energy

„

11

mJ

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

W

Micro3

™

S

G 1

2

D

3

IRLML6402PbF

Form

Quantity

IRLML6402TRPbF

Micro3™ (SOT-23)

Tape and Reel

3000

IRLML6402TRPbF

Package Type

Standard Pack

Orderable Part Number

Base Part Number

1

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April 28, 2014