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BAS86 bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

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BAS86 bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

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NXP Semiconductors
BAS86
Schottky barrier single diode
BAS86
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
25 July 2012
2 / 9
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
Graphic symbol
1
K
cathode[1]
2
A
anode
k
a
LLDS; MiniMelf (SOD80C)
aaa-003679
K
A
[1] The marking band indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Type number
Name
Description
Version
BAS86
LLDS;
MiniMelf
hermetically sealed glass surface-mounted package; 2
connectors
SOD80C
4. Marking
Table 4.
Marking codes
Type number
Marking code
BAS86
marking band
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
50
V
IF
forward current
-
200
mA
IF(AV)
average forward current
[1]
-
200
mA
IFRM
repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5
-
500
mA
IFSM
non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C
-
5
A
Tj
junction temperature
-
125
°C
Tamb
ambient temperature
-65
125
°C
Tstg
storage temperature
-65
150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.



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